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| SKR 12,4 Qu bond Absolute Maximum Ratings Symbol VRRM IF(AV) it IFSM Tjmax 2 Conditions Tj = 25 C, IR = 0.2 mA Ts = 80 C, Tj = 150 C Tj = 150 C, 10 ms, sin 180 10 ms sin 180 Tj = 25 C Tj = 150 C Values 1600 190 26500 3200 2300 150 Unit V A A2s A A C DIODE IF(DC) = 235 A VRRM = 1600 V Size: 12,4 mm x 12,4 mm SKR 12,4 Qu bond Electrical Characteristics Symbol IR VF V(TO) rT trr Conditions Tj = 25 C, VRRM Tj = 120 C, VRRM Tj = 25 C, IF = 160 A Tj = 125 C, IF = 160 A Tj = 125 C Tj = 125 C Tj = 25 C, 1 A min. typ. max. 0.2 1.1 Unit mA mA V V V m s 1 0.9 1.21 1.1 0.83 1.0 34 Features * high current density due to mesa technology * high surge current * compatible to thick wire bonding * compatible to all standard solder processes Thermal Characteristics Symbol Tj Tstg Tsolder Tsolder Rth(j-s) 10 min. 5 min. soldered on 0,38 mm DCB, reference point on copper heatsink close to the chip 0.27 Conditions min. -40 -40 typ. max. 150 150 250 320 Unit C C C C K/W Typical Applications* * uncontrolled rectifier bridges Mechanical Characteristics Symbol Raster size Area total Anode Cathode Wire bond Package Chips / Package Conditions Values 12.4 x 12.4 153.76 bondable (Al) solderable (Ag/Ni) Al, diameter 500 m tray 36 Unit mm2 mm2 pcs SKR (c) by SEMIKRON Rev. 1 - 19.02.2010 1 SKR 12,4 Qu bond This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. 2 Rev. 1 - 19.02.2010 (c) by SEMIKRON |
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